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04XX01 2545CT T6000818 AN6350 1N485 02S2012 29LV800 1PS193
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  page . 1 august 12.2010-rev.00 pjsd03w~pjsd36w voltage power 3~36 volts 350 watts single line tvs diode for esd protection portable electronics ? 350 watts peak pules power( tp=8/20 s) ? small package for use in portable electronics ? suitable replacement for mlv?s in esd protection applications ? low clamping voltage and leakage current ? in compliance with eu rohs 2002/95/ec directives maximum ratings and electrical chatacteristics ? case: sod-323 plastic ? terminals : solderable per mil-std-750,method 2026 ? polarity : color band cathode ? apporx. weight: 0.0001 ounce, 0.0041 gram applications features absolute maximum rating rating symbol value units peak pulse power (tp=8/20 s) p pk 350 w esd voltage v esd 25 kv operating temperature t j -50 to 150 o c storage temperature t stg -50 to 150 o c 1 2 cathode anode
page . 2 august 12.2010-rev.00 pjsd03w~pjsd36w pjsd05w marking 05w parameter symbol conditions min. typical max. units reverse stand-off voltage v rwm ---5v reverse breakdown voltage v br i br =1ma 6 - 7.2 v reverse leakage current i r v r =5v - - 10 a clamping voltage(8/20 s) v c i pp =1a - - 9.8 v off state junction capacitance c j 0vdc bias=f=1mhz - 300 - pf off state junction capacitance c j 5vdc bias=f=1mhz - 100 - pf PJSD12W marking 12w parameter symbol conditions min. typical max. units reverse stand-off voltage v rwm ---12v reverse breakdown voltage v br i br =1ma 13.3 - 15 v reverse leakage current i r v r =12v --1 a clamping voltage(8/20 s) v c i pp =1a - - 19 v off state junction capacitance c j 0vdc bias=f=1mhz - 130 - pf off state junction capacitance c j 5vdc bias=f=1mhz - 50 - pf pjsd08w marking 08w parameter symbol conditions min. typical max. units reverse stand-off voltage v rwm ---8v reverse breakdown voltage v br i br =1ma 8.5 - 10 v reverse leakage current i r v r =8v - - 10 a clamping voltage(8/20 s) v c i pp =1a - - 13.4 v off state junction capacitance c j 0vdc bias=f=1mhz - 150 - pf off state junction capacitance c j 5vdc bias=f=1mhz - 80 - pf pjsd03w marking 03w parameter symbol conditions min. typical max. units reverse stand-off voltage v rwm ---3.0v reverse breakdown voltage v br i br =1ma 4 - 5.0 v reverse leakage current i r v r =3.0v - - 125 a clamping voltage(8/20 s) v c i pp =1a - - 6.5 v off state junction capacitance c j 0vdc bias=f=1mhz - 450 - pf off state junction capacitance c j 5vdc bias=f=1mhz - 150 - pf
page . 3 august 12.2010-rev.00 pjsd03w~pjsd36w pjsd24w marking 24w parameter symbol conditions min. typical max. units reverse stand-off voltage v rwm ---24v reverse breakdown voltage v br i br =1ma 26.6 - 30 v reverse leakage current i r v r =24v --1 a clamping voltage(8/20 s) v c i pp =1a - - 43 v off state junction capacitance c j 0vdc bias=f=1mhz - 80 - pf off state junction capacitance c j 5vdc bias=f=1mhz - 10 - pf pjsd36w marking 36w parameter symbol conditions min. typical max. units reverse stand-off voltage v rwm ---36v reverse breakdown voltage v br i br =1ma 39.9 - 45 v reverse leakage current i r v r =36v --1 a clamping voltage(8/20 s) v c i pp =1a - - 60 v off state junction capacitance c j 0vdc bias=f=1mhz - 30 - pf off state junction capacitance c j 5vdc bias=f=1mhz - 1 - pf pjsd15w marking 15w parameter symbol conditions min. typical max. units reverse stand-off voltage v rwm ---15v reverse breakdown voltage v br i br =1ma 16.7 - 20 v reverse leakage current i r v r =15v --1 a clamping voltage(8/20 s) v c i pp =1a - - 24 v off state junction capacitance c j 0vdc bias=f=1mhz - 120 - pf off state junction capacitance c j 5vdc bias=f=1mhz - 30 - pf
page . 4 august 12.2010-rev.00 pjsd03w~pjsd36w 0.01 1 10 100 1000 10000 10000 1000 100 10 t -pulse duration- s d  0 5 10 15 20 25 30 120 100 80 60 40 20 0 t-time- s  02550 75 100 125 150 100 80 60 40 20 0 t -lead temperature- c l o 0 12 3 4 5 6 400 300 200 100 0 v =reverse voltage-volts r 320w,8/20 s waveform  p -peak pulse current-watts pp i -peak pulse current-% of i pp pp t=ti /2 dpp peak pulse power 8/20 s  average power e -t t f peak value i pp test waveform parameters t t f=8 s d=20 s   %of rated power c-capacitance-pf fig. 1- pulse wave form fig. 1- pulse wave form fig. 3-peak pulse power vs pulse time fig. 3-peak pulse power vs pulse time fig. 4-typical reverse voltage vs capacitance fig. 4-typical reverse voltage vs capacitance fig. 2-power derating curve fig. 2-power derating curve
page . 5 august 12.2010-rev.00 legal statement copyright panjit international, inc 2010 the information presented in this document is believed to be accurate and reliable. the specifications and information herein are subject to change without notice. pan jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. pan jit products are not authorized for use in life support devices or systems. pan jit does not convey any license under its patent rights or rights of others. mounting pad layout order information ? packing information t/r - 12k per 13" plastic reel t/r - 5k per 7" plastic reel pjsd03w~pjsd36w


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